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RF Device Data
Freescale Semiconductor
MRF6V14300HR3 MRF6V14300HSR3
TYPICAL CHARACTERISTICS
245
6
0
400
0
25_C
85_C
3
1
200
100
Pin, INPUT POWER (WATTS) PULSED
Figure 9. Pulsed Output Power versus
Input Power
P
out
, OUTPUT POWER (WATTS) PULSED
300
TC
=--30_C
VDD
=50Vdc,IDQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec, Duty Cycle = 12%
16
24
50
22
70
100
58
46
Pout, OUTPUT POWER (WATTS) PULSED
Figure 10. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
ηD
22
400
25_C
TC
=--30_C
85_C
34
20
18
55_C
VDD
=50Vdc,IDQ
= 150 mA, f = 1400 MHz
Pulse Width = 300
μsec, Duty Cycle = 12%
Gps
C
-- 3 0_C
25_
55_C
85_C
Figure 11. Broadband Performance @ Pout
= 330 Watts Peak
9
19
1200
f, FREQUENCY (MHz)
15
13
1225
17
1250 1275 1300 1325 1350 1375 1400
-- 2 5
63
62
60
0
-- 5
11
G
ps
, POWER GAIN (dB)
10
12
14
16
18
61
59
-- 1 0
-- 1 5
-- 2 0
η
D,
DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN
LOSS (dB)
VDD
=50Vdc,IDQ
= 150 mA, Pout
= 330 W Peak (39.6 W Avg.)
Pulse Width = 300
μsec, Duty Cycle = 12%
Gps
ηD
IRL
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
=50Vdc,Pout
= 330 W Peak, Pulse Width = 300
μsec,
Duty Cycle = 12%, and
ηD
= 60.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
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